XVII-ICSMV

COMPUTER SIMULATION OF THE IRRADIATION OF (BI, PB)-2212 SUPERCONDUCTING THIN FILMS WITH IONS FOR THE CREATION OF MAGNETIC VORTEX PINNING POINTS

Not scheduled

1h 30m

Museo Caracol (Ensenada, México)

Poster Theory and Simulation of Materials THEORY AND SIMULATION OF MATERIALS

Speaker

Francisco Emmanuel Sánchez Zacate (Escuela Superior de Física y Matemáticas del Instituto Politécnico Nacional)

Description

Superconducting materials are capable of carrying electric current densities four orders of magnitude greater than that of a copper wire. A promising method to enhance the critical current density (Jc) in High-Temperature Superconductors is the ion irradiation. The objective is to create imperfections into the crystalline structure of the material, which serve as pinning points for the magnetic vortices that emerge within the type II superconductors. As vortices begin to move within the material, Jc rapidly decreases to zero. The creation of pinning points and the subsequent reduction in vortex mobility serve to enhance the magnitude of Jc of the film. In this work, computer simulations of ion irradiation over a superconducting thin film were made using the software SRIM v. 2013.00 [1]. Films of the superconductor (Bi, Pb)-2212 (Bi1.6Pb0.4Sr2CaCu2O8) with thicknesses of 200, 500 and 1000 nm were simulated. The parameters of the irradiated ions were: Type of ion: He, C, Si, Cu, Ag and Au. Irradiation energy: 3 and 6 MeV. Angle of incidence: 0° and 45°. For each simulation, a single value was assigned to each of the aforementioned parameters. Each simulation consisted of 100,000 ions fired in succession. Considering that each atom displaced from its original position in the crystal lattice due to ion irradiation can be a pinning point, heavy ions such as Ag and Au were found to be the most efficient in creating pinning points (up to 15000 per ion). The irradiation of samples with lower atomic mass ions like C, Si, Cu, and Ag, resulted in the creation of fewer pinning points. However, the sample is less likely to become amorphous due to the irradiation process. For an irradiation energy of 3 MeV the amount of ions trapped inside the film increases significantly and is not recommended.
Presenting author: fesanchez4@gmail.com

Reference

J.F. Ziegler, J. Biersack, U. Littmark, ‘‘The Stopping and Range of Ions in Matter’’,
Pergamon Press, 1985. https://doi.org/10.1007/978-1-4615-8103-1_3

This work was supported by

Francisco Emmanuel Sánchez Zacate expresses his gratitude to CONAHCYT Mexico for the grant awarded during his postdoctoral stay at Escuela Superior de Física y Matemáticas of Instituto Politécnico Nacional, in Mexico City, from October 2022 to September 2024.