Speaker
Description
The III-V semiconductors are often used to growth technologies like molecular beam epitaxy. Moreover, the interest in the structure and stability of the (001) surfaces has also been caused by the rich variety of surface reconstructions. The large number of surface reconstructions observed on III-V (001) surfaces have prompted attempts to classify and understand them from a more general point of view. This study attempts to classify the surface reconstruction of AlAs from the (001) surface by first-principle method. There are shown the dimerization and trimerization atomic structures of some different reconstructions.
Reference
A.M.Dabiran, P.I.Cohen: Journal of Crystal Growth, 1995, 150[1-4], 23-7
This work was supported by
We thank DGAPA-UNAM projects IA100624, IG101124, IN101523 and IN105722 for partial financial support. Calculations were performed in the DGTIC-UNAM Supercomputing Center projects LANCAD-UNAM-DGTIC-51, LANCAD-UNAM-DGTIC-150, LANCAD-UNAM-DGTIC-368, and LANCAD-UNAM-DGTIC-422
| Keywords | Surface reconstruction, Semiconductor, AlAs |
|---|---|
| Author approval | I confirm |
| Author will attend | I confirm |