Speaker
Description
Due to its favorable electrical, structural, and optical characteristics, including high electron mobility and a direct band gap, the antimonide family provides an excellent alternative for developing more efficient and high-speed optical devices. Antimonide-based devices, such as light emitting and detection systems, operate in the near and mid-infrared region. Recently, significant interest has emerged in improving the crystal quality of the antimonides, leading to investigation into their coupling with 2D materials such as graphene (G)[1]. The interaction between antimonides and graphene occurs through van der Waals forces, which are inherently weak, facilitating the transfer of growth from the graphene substrate. Therefore, in this work, we grew gallium antimonide (GaSb) on G/Si (111) using the close space vapor transport (CSVT) technique. GaSb was grown at temperatures ranging from 510 to 610°C. The GaSb compound was characterized by Raman spectroscopy, scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). As results, we were able to observe by Raman the LO and TO phononic modes corresponding to GaSb at 231 and 226 cm^-1, respectively. Additionally, SEM revealed the formation of 3D GaSb structures in the form of islands and nanocolumns. Finally, we could confirm the presence of Ga—Sb and O—Sb bonds in the structures by XPS.
This work was supported by
CONAHCYT, IPN, Project CONAHCYT-Frontier Science 2023 CF-2023-I-1117
Reference
Y. Alaskar et al., “Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer,” Adv. Funct. Mater., vol. 24, no. 42, (2014), pp. 6629–6638, doi: 10.1002/adfm.201400960
| Keywords | graphene, antimonides, CSVT, van der Waals forces, optoelectronic device |
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| Author will attend | I confirm |
