XVII-ICSMV

PROCESSING OF INDIUM SULFIDE AND CADMIUM SULFIDE THIN FILMS BY SPUTTERING-RF AT OXYGEN ATMOSPHERE FOR APPLICATIONS IN OPTOELECTRONICS DEVICES

Not scheduled

1h 30m

Museo Caracol (Ensenada, México)

Oral Renewable Energy: Materials and Devices RENEWABLE ENERGY

Speakers

Antony Francisco López Sánchez (Instituto Politécnico Nacional)Dr Rogelio Mendoza (Universidad Autónoma de la Ciudad de México)

Description

One of the important physical properties to consider in a semiconductor window is the value of its band-gap Eg. In2S3 and CdS have typical Eg of the order of 2.42 and 2.62 eV, respectively; that is, their absorption window is in the visible light region. In this work, different configurations of these semiconductors were processed by means of the processing technique Magneto-Planar Cathode Sputtering in Radio Frequency mode (Sputtering-RF) in an Ar+O2 atmosphere, such as: In2S3/CdS, In2S3 :O2/CdS, In2S3/CdS:O2 and In2S3:O2/CdS:O2; with the purpose of studying the change in the optoelectrical properties of these window Semiconductors. In2S3 and CdS semiconductors, when deposited together sequentially in Sputtering-RF in an Ar atmosphere with the parameters: RF source power (Pot = 150 and 100 W, respectively), substrate temperature (Ts = 250 and 225 °C, respectively) and deposition pressure (P = 10 and 12.5 mTorr, respectively), has a thickness of approximately 150 nm (In2S3 = 50 nm and CdS = 100 nm) and an average deposition rate of approximately 6 nm/min; whereas, when these same semiconductors are deposited in an O2 atmosphere with a flux of 1.0 sccm (5% of the total Ar+O2 flow entering the deposition chamber, approximately). As results we obtained that the mentioned configurations and with these same deposition parameters; the thickness decreases around 125 nm (average deposition rate of 5 nm/min); as well as other optical and morphological changes, such as: the absorption window is shifted towards the UV region (370 nm), for the In2S3 :O2/CdS:O2 configuration; attractive properties for the mentioned applications.

Reference

Materials Research Express
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Incorporation of an efficient β-In2S3 thin film as window material into CdTe photovoltaic devices Mater.Res.Express6(2019)125510 https://doi.org/10.1088/2053-1591/ab5508

This work was supported by

This work was supported through the scholarship programs PIFI-IPN, BEIFI, SIP-IPN 20240682, UACM-CCYT2023-IMP-01 AND CONAHCyT.